t4 - lds -03 14 , rev . 1 (1 1/20 /13 ) ?201 3 microsemi corporation page 1 of 8 2n6 35 0 and 2n6 35 1 available on commercial versions np n darlington power silicon transistor qualified per mil - prf - 19500/472 qualified levels : jan, jantx, and jantxv description this high speed npn tran sistor is military qualified up to the jantxv level. this to - 33 leaded top - hat has three isolated terminals with terminal four , the collector terminal, tied to the case. to - 33 package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n6 350 and 2n6 351 ? jan, jantx, and jantxv qualification s are available per mil - prf - 19500/472 (see part nomenclature for all available options) ? rohs compliant versions available (commercial grade only) applications / benefits ? m ilitary and other high reliability appli cations ? high frequency response ? to - 33 leaded top - hat m axim um ratings @ t c = +25 o c unless otherwise noted ms c C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, enni s, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junct ion and storage temperature t j and t stg - 65 to +200 o c thermal resistance junction - to - case r ? jc 20 o c /w collector - emitter voltage 2n635 0 2n635 1 v ceo 80 150 v collector - base voltage 2n6 35 0 2n6 35 1 v cbo 80 150 v emitter - base voltage v ebo 12 6.0 v total power dissipation @ t a = +25 o c (1) @ t c = +100 o c (2) p t 1.0 5.0 w base current i b 0.5 a collector current i c 5 a notes : 1. derate linearly 5.72 m w/ o c for t a > +25 o c 2. derate linearly 50 m w/ o c for t c > + 100 o c downloaded from: http:///
t4 - lds -03 14 , rev . 1 (1 1/20 /13 ) ?201 3 microsemi corporation page 2 of 8 2n6 35 0 and 2n6 35 1 mechanical and packaging ? case: hermetically sealed, kov ar base, nickel cap. ? terminals: s older d ip (sn63/pb37), rohs compliant matte - tin plating available on commercial grade only . ? marking: part number, date code, manufacturers id and serial number ? w eight: approximately 1.2 grams ? see p ackage d imensions on last page. part nomenclature jan 2n 6 35 0 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee electrical characteristics t able ) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition i b base current: the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the collector terminal. i e emitter current: the value of the dc current into the emitter terminal. t c case temperature: the temperature measured at a specified location on the case of a device. v cb collector - base voltage: the dc voltage between the collector and the base. v cb o collector - base voltage, base open : the voltage between the collector and base terminals when the emitter terminal is open - circuited . v cc collector - supply voltage: the supply voltage applied to a circuit connected to the collector. v ce o collector - emitter voltage, base open : the voltage between the collector and the emitte r terminals when the base terminal is open - circuited. v ce collect or - emitter voltage: the dc voltage between the collector and the emitter. v eb emitter - base voltage: the dc voltage between the emitter and the base . v ebo emitter - base voltage, collector open : the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds -03 14 , rev . 1 (1 1/20 /13 ) ?201 3 microsemi corporation page 3 of 8 2n6 35 0 and 2n6 35 1 electrical characteristics @ t a = + 25 o c unless otherwise noted characteristics symbol min. max. unit of f characteristics collector - emitter breakdown voltage i c = 25 ma , r b1e = 2.2 k? , r b2e = 100 ? 2n6 35 0 2n6 35 1 v (br)ceo 80 150 v collector - emitter breakdown voltage i e = 12 ma, base 1 open i e = 12 ma, base 2 open v (br)ebo 6.0 12 v collector - emitter cutoff current v ce = 80 v, v eb1 = 2 v , r b2e = 100 ? v ce = 1 5 0 v, v eb1 = 2 v , r b2e = 100 ? 2n6 35 0 2 n6 35 1 i cex 1.0 a on characteristics forward - current transfer ratio i c = 1.0 a, v ce = 5 .0 v , r b2e = 1 k? 2n635 0 2n635 1 h fe 2,000 1,000 i c = 5 .0 a, v ce = 5 .0 v , r b2e = 100 ? 2n635 0 2n635 1 2,000 1,000 10,000 10,000 i c = 10 .0 a, v ce = 5 .0 v , r b2e = 100 ? 2n635 0 2n635 1 400 200 collector - emitter saturation voltage i c = 5.0 a, i b = 5 ma , r b2e = 100 ? i c = 5.0 a, i b = 10 ma , r b2e = 100 ? v ce(sat) 1.5 2.5 v base - emitter voltage non - saturated v ce = 5 .0 v, i c = 5.0 a , r b2e = 100 ? v be 2. 5 v dynami c characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 1.0 a, v ce = 10 .0 v, f = 10 mh z, r b2e = 100 ? |hfe| 5 25 output capacitance v cb = 10 v, 1 00 k hz f 1 mhz , base 2 o pen cobo 12 0 pf downloaded from: http:///
t4 - lds -03 14 , rev . 1 (1 1/20 /13 ) ?201 3 microsemi corporation page 4 of 8 2n6 35 0 and 2n6 35 1 electrical characteristics @ t c = 25 o c unless otherwise noted. (continued) switchin g characteristics turn - on time v cc = 30 v, i c = 5.0 a t on 0.5 s turn - off time v cc = 30 v, i c = 5.0 a t off 1 .2 s saf e operatin g area (see f igure s 1 and 2 and mil - std - 750,test method 3053 ) dc tests t c = + 10 0 oc , t 1 second , 1 cycle ; t r + t f = 10 s, r b2e = 100 ? test 1 v ce = 1.5 v, i c = 3.3 a test 2 v ce = 30 v, i c = 167 ma test 3 v ce = 8 0 v, i c = 35 ma (2n6 35 0) test 4 v ce = 15 0 v, i c = 13 ma (2n6 35 1) downloaded from: http:///
t4 - lds -03 14 , rev . 1 (1 1/20 /13 ) ?201 3 microsemi corporation page 5 of 8 2n6 35 0 and 2n6 35 1 safe operating area v ce C collector to emitter voltage (volts) figure 1 maximum safe operating area i c = collector current (amperes) downloaded from: http:///
t4 - lds -03 14 , rev . 1 (1 1/20 /13 ) ?201 3 microsemi corporation page 6 of 8 2n6 35 0 and 2n6 35 1 safe operating area (continued) v ce C collector to emitter voltage (volts) figure 2 s afe o perating a rea for switching between saturation and cutoff (unclamped inductive load) i c = collector current (amperes) downloaded from: http:///
t4 - lds -03 14 , rev . 1 (1 1/20 /13 ) ?201 3 microsemi corporation page 7 of 8 2n6 35 0 and 2n6 35 1 package dimensions notes: 1. dimensions are in inches. millimeters are given for information only. 2. internal resistance (typically 750 ohms). this resistor is optional. 3. dimension cd shall not vary more than 0 .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 4. leads at gauge plane 0 .054 +0 .001 C0 .000 inch (1.37 +0.03 C 0.00 mm) below seating plane shall be within 0 .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to t ab at mmc. the device may be measured by direct methods. 5. dimension lu applies between dimension l1 and dimension l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in dimension l1 and beyond dimension ll minimum. 6. all terminals. 7. dimension tl measured from maximum hd. 8. beyond r (radius) maximum, dimension tw shall be held for a minimum length of 0 .011 inch (0.28 mm). 9. outline in this zone is not controlled. 10. the radius (dimension r) applies to both inside corners of the tab. 11. terminal designation is as follows: 1 C emitter, 2 C b ase (b2), 3 C base (b1), 4 C collector. the collector shall be connected to the case. 12. in accordance with asme y14.5m, diameters are equivalent to x symbology. see schematic on next page dimensions symbol inches millimeters notes min max min max cd 0 .305 0 .335 7.75 8.51 3 ch 0 .240 0 .260 6.10 6.60 hd 0 .335 0 .370 8.51 9.40 lc 0 .200 tp 5.08 tp 4 ld 0 .016 0 .021 0.41 0.53 5, 6 ll 1 .500 1 .750 38.10 44.45 5, 6 lu 0 .016 0 .019 0.41 0.48 5, 6 l 1 - 0 .050 - 1.27 5, 6 l 2 0 .250 - 6.35 - 5, 6 q - 0 .050 - 1.27 9 tl 0 .029 0 .045 0.74 1.14 7 tw 0 .028 0 .034 0.71 0.86 8 r - 0 .010 - 0.25 10 45 tp 45 tp 4 p 0 .100 - 2.54 - 3 downloaded from: http:///
t4 - lds -03 14 , rev . 1 (1 1/20 /13 ) ?201 3 microsemi corporation page 8 of 8 2n6 35 0 and 2n6 35 1 schematic downloaded from: http:///
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